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簡(jiǎn)要描述：GeS2晶體Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description.
更新時(shí)間：2024-06-02產(chǎn)品型號(hào)： 廠商性質(zhì)：生產(chǎn)廠家訪 問(wèn) 量：791相關(guān)文章
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Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description. GeS2 vdW crystals were grown using chemical vapor transport technique at high pressures and temperatures over 2 months to ensure high crystallinity and vdW nature. The crystals large is size and measure ~1cm in size. The crystal itself exhibits unique layered vdW form with quasi-1D or anisotropic ribbon like structure much like in ReS2, ReSe2, or TiS3. Many of its properties are still not well established in bulk and remains unknown from few-layer to monolayers.
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