13651969369
簡要描述：二硫化鉬晶體（2H-合成/99.995%/p 型） MoS2(Molybdenum Disulfide)-syn晶體尺寸:~10毫米電學性能：P型半導體晶體結構：六邊形晶胞參數：a = b = 0.315 nm, c = 1.229 nm, α = β = 90°, γ = 120°晶體類型：合成晶體純度：＞99.995%
更新時間：2024-06-02產品型號： 廠商性質：生產廠家訪 問 量：1307相關文章
Related Articles詳細介紹
二硫化鉬晶體（2H-合成/99.995%/p 型） MoS2(Molybdenum Disulfide)-syn
晶體尺寸:~10毫米
電學性能：P型半導體
晶體結構：六邊形
晶胞參數：a = b = 0.315 nm, c = 1.229 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%
X-ray diffraction on a 2H-MoS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10
Powder X-ray diffraction (XRD) of a single crystal MoS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal MoS2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal MoS2. Measurement was performed with a 785 nm Raman system at room temperature.
產品咨詢
歡迎來到
聯(lián)系人：陳谷一
地址：江蘇省泰州市鳳凰西路168號
郵箱：taizhou@sunano.com.cn
電話：021-56830191
